PROCESS -> SPUTTERING

Metal Film Vacuum Sputtering

The Thin Resistive Film is the current carrying element in a Thin Film Resistor. A high grade Ceramic Core is selected on the basis of its Alumina Content for regular, miniature or ultra miniature resistor type of requisite surface finish as a substrate for this thin film.

Planer Magnetron Sputtering Plant is used for deposition of a variety of resistive films like NiCr, NiCrSi, CrSi etc depending on the required resistivity, stability, power rating, temperature characteristics and other performance criteria.

The deposition takes place in a Vacuum Chamber, inside which a revolving drum which contains the charge of Ceramic Substrates. Insulated from the chamber is a cathode (magnetron) on the surface of which a high purity source (target) is mounted.

The chamber is evacuated upto 10-5 torr with the help of diffusion and rotary vacuum pump after which Argon is injected and a potential of 450 volts is applied between the cathode and the drum. Argon gets ionized and the positive Argon ions are accelerated towards the negatively charged cathode. The Argon ions bombard the surface of the target and sputter out the resistive material, which is deposited on the ceramic substrates.

The sputter deposited film is in a reactive state and needs to be stabilized by a special heat treatment to ensure stability and trim its temperature co-efficient to the required level.

The metallized substrates are coated with a coat of Phenolic Varnish to protect it from atmospheric reagents during storage.


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